HYB18T256400AF Datasheet, PDF (72/90 Pages) Infineon Technologies AG – 256 Mbi t DDR2 SDRAM

HYB18T256400/800/160AF
256Mb DDR2 SDRAM
6. IDD Specifications and Measurement Conditions
6.1 IDD Specifications
(VDDQ = 1.8V ± 0.1V; VDD = 1.8V ± 0.1V, 0 ^oC to T_CASEmax.)
Symbol
Parameter/Condition
IDD0 Operating Current
IDD1 Operating Current
IDD2P Precharge Power-Down Current
IDD2N Precharge Standby Current
IDD2Q Precharge Quiet Standby Current:
IDD3P
Active Power-Down Standby
Current
MRS(12)=0
MRS(12)=1
IDD3N Active Standby Current
IDD4R Operating Current Burst Read
IDD4W Operating Current Burst Write
IDD5B Burst Auto-Refresh Current (tRFC=tRFCmin.)
IDD5D Distributed Auto-Refresh Current (tRFC=7.8µs)
IDD6 Self-Refresh Current for standard products
IDD6 Self-Refresh Current for low power products
IDD7 Operating Current
I/O
all
all
all
all
all
all
all
all
x4/x8
x16
x4/x8
x16
all
all
all
all
x4/x8
x16
-5
DDR2 -400
max.
50
55
4
28
20
13
4
30
60
70
70
90
80
6
4
2
125
140
-3.7
DDR2 -533
max.
55
60
4
36
25
16
4
35
70
80
85
100
85
6
4
2
135
150
-3 & -3S _Unit
DDR2 - 667
max.
60
mA
65
mA
4
mA
45
mA
30
mA
20
mA
4
mA
40
mA
80
90
mA
100
115
mA
90
mA
6
mA
4
mA
2
mA
145
160
mA
Page 72
Rev. 1.02 May 2004
INFINEON Technologies