TC290 Datasheet, PDF (453/476 Pages) Infineon Technologies AG – 32-Bit Single-Chip Micocontroller

TC290 / TC297 / TC298 / TC299 BB-Step
Electrical SpecificationFlash Target Parameters
Table 3-107 FLASH (cont’d)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
UCB Retention Time
t_RTU CC
20
-
-
years Max. 100
erase/program cycles
per UCB, max 400
erase/program cycles
in total
Data Flash access delay
t_DF CC
-
-
100
ns
see
PMU_FCON.WSDFLA
SH
Data Flash ECC Delay
t_DFECC CC -
-
20
ns
see
PMU_FCON.WSECD
F
Program Flash access delay t_PF CC
-
-
30
ns
see
PMU_FCON.WSPFLA
SH
Program Flash ECC delay
t_PFECC CC -
-
10
ns
see
PMU_FCON.WSECP
F
Number of erase operations on N_ERD0 CC -
-
750000 cycles
DF0 over lifetime
Number of erase operations on N_ERD1 CC -
-
500000 cycles
DF1 over lifetime
Junction temperature limit for T_JPFlash SR -
-
150
°C
PFlash program/erase
operations
1) All typical values were characterised, but are not tested. Typical values are safe median values at room temperature
2) Under out-of-spec conditions (e.g. over-cycling) or in case of activation of WL oriented defects, the duration of erase
processes may be increased by up to 50%.
3) Time is not dependent on program mode (5V or 3.3V).
4) Using 512 KByte erase commands.
5) Only valid when a robust EEPROM emulation algorithm is used. For more details see the Users Manual.
Data Sheet
3-447
V 1.1 2015-05
TC290/TC297/TC298/TC299 BB-Step Data Sheet downloaded by saravanakumar maniyam (larsen and Toubro limited) at 08 Sep 2015 08:06