TC290 Datasheet, PDF (349/476 Pages) Infineon Technologies AG – 32-Bit Single-Chip Micocontroller

TC290 / TC297 / TC298 / TC299 BB-Step
Electrical SpecificationHigh performance LVDS Pads (LVDSH)
Table 3-23 Class F (cont’d)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
On resistance for F pad,
R_DSONFM
40
70
100
Ohm PMOS/NMOS ;
medium driver ²⁾
CC
I_OH=2mA ; I_OL=2mA
On resistance for F pad, strong R_DSONFS CC 20
50
80
Ohm PMOS/NMOS ;
driver ²⁾
I_OH=4mA ; I_OL=4mA
Rise/fall time for F pad ³⁾
t_rfF CC
-
-
20+0.8*C ns
C_L≤50pF ; pin out
L
driver=weak
-
-
17.5+0.85 ns
C_L≥50pF ; C_L≤200pF ;
*C_L
pin out driver=weak
-
-
12+0.16* ns
C_L≤50pF ; pin out
C_L
driver=medium
-
-
11.5+0.17 ns
C_L≥50pF ; C_L≤200pF ;
*C_L
pin out driver=medium
-
-
7+0.16*C ns
C_L≤50pF ;
L
edge=medium ; pin out
driver=reduced strong
-
-
6.5+0.17* ns
C_L≥50pF ; C_L≤200pF ;
C_L
edge=meduim ; pin out
driver>reduced strong
-
-
4+0.16*C ns
C_L≤50pF ; edge=sharp
L
; pin out
driver=reduced strong
-
-
3.5+0.17* ns
C_L≥50pF ; C_L≤200pF ;
C_L
edge=sharp ; pin out
driver=reduced strong
Input high voltage for F pad V_IHF SR
2.04 ⁴⁾
-
Input low voltage for F pad
V_ILF SR
-
-
Pad set-up time for F pad
t_SETF CC
-
-
Deviation of symmetry for rising SYM CC -
-
and falling edges
-
V
TTL
0.8 ⁵⁾
V
TTL
100
ns
20
%
1) Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can't be guaranteed
that it suppresses switching due to external system noise.
2) For currents smaller than the I_OL/OH from the test condition the defined Max. value stays unchanged.
3) Rise / fall times are defined 10% - 90% of V_DDP3.
4) V_IHx = 0.57 * V_DDP3 - 0.03V
5) V_ILx = 0.25 * V_DDP3 + 0.058V
C_L = 2.5 pF for all LVDSH parameters.
Data Sheet
3-343
V 1.1 2015-05
TC290/TC297/TC298/TC299 BB-Step Data Sheet downloaded by saravanakumar maniyam (larsen and Toubro limited) at 08 Sep 2015 08:06