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TC290 Datasheet, PDF (341/476 Pages) Infineon Technologies AG – 32-Bit Single-Chip Micocontroller
TC290 / TC297 / TC298 / TC299 BB-Step
Electrical Specification5 V / 3.3 V switchable Pads
Table 3-13 Class MPR 5V (cont’d)
Parameter
Symbol
Values
Unit Note / Test Condition
Min.
Typ.
Max.
Input low / high voltage, class VILHMPR SR 1.2
-
MPR pads
2.3
V
Hysteresis inactive
Pad set-up time
tSET_MPR CC -
-
Short circuit current Class MPR ISC SR
-10
-
100
ns
10
mA absolute max value
(PSI5)
Deviation of symmetry for rising SYM CC -
-
20
%
and falling edges
1) Hysteresis is implemented to avoid metastable states and switching due to internal ground bounce. It can't be guaranteed
that it suppresses switching due to external system noise.
2) For currents smaller than the IOL/OH from the test condition the defined Max. value stays unchanged.
3) Rise / fall times are defined 10% - 90% of VEXT/FLEX.
4) VIHx = 0.27 * VEXT/FLEX + 0.545V
5) VILx = 0.17 * VEXT/FLEX
Table 3-14 Class MPR 3.3V
Parameter
Symbol
Min.
Input frequency
fIN SR
-
-
Input Hysteresis for MPR pads HYSMPR
1)
CC
Input leakage current class
MPR
IOZMPR CC
0.05 *
VEXT/FLEX
-750
-1500
Pull-up current
IPUHMPR CC |17|
|19|
-
Pull-down current
IPDLMPR CC -
|22|
|11|
On-resistance of the MPR pad, RDSONMPRW 250
weak driver 2)
CC
Values
Typ.
-
-
-
-
-
-
-
-
-
-
-
875
Max.
50
100
-
750
1500
-
-
|75|
|75|
-
-
1500
On-resistance of the MPR pad, RDSONMPRM 70
medium driver 2)
CC
On-resistance of the MPR pad, RDSONMPRS 20
strong driver 2)
CC
235
400
75
130
Unit Note / Test Condition
MHz
MHz
V
Hysteresis active
Hysteresis inactive
AL and TTL
nA
nA
µA
µA
µA
µA
µA
µA
Ohm
Ohm
Ohm
(0.1*VEXT/FLEX) < VIN <
(0.9*VEXT/FLEX)
else
VIHmin; AL
VIHmin; TTL
VILmax; AL and TTL
VIHmin; AL and TTL
VILmax; AL
VILmax; TTL
; NMOS/PMOS ;
IOH=0.25mA ;
IOL=0.25mA
; NMOS/PMOS ;
IOH=1mA ; IOL=1mA
PMOS/NMOS ;
IOH=4mA ; IOL=4mA
Data Sheet
3-335
V 1.1 2015-05
TC290/TC297/TC298/TC299 BB-Step Data Sheet downloaded by saravanakumar maniyam (larsen and Toubro limited) at 08 Sep 2015 08:06