English
Language : 

TC290 Datasheet, PDF (452/476 Pages) Infineon Technologies AG – 32-Bit Single-Chip Micocontroller
◁
TC290 / TC297 / TC298 / TC299 BB-Step
Electrical SpecificationFlash Target Parameters
Table 3-107 FLASH (cont’d)
Parameter
Symbol
Program Flash suspend to read tSPNDP CC
latency
Min.
-
Data Flash Erase Time per
tERD CC
-
Sector 2)
-
Data Flash Erase Time per
Multi-Sector Command 2)
tMERD CC -
-
Data Flash erase disturb limit NDFD CC -
Program time data flash per tPRD CC
-
page 3)
Complete Device Flash Erase tER_Dev CC -
Time PFlash and DFlash 4)
Data Flash program time per tPRDB CC -
burst 3)
Data Flash suspend to read
latency
tSPNDD CC -
Wait time after margin change tFL_MarginDel -
CC
Program Flash Retention Time, tRET CC
20
Sector
Data Flash Endurance per
EEPROMx sector 5)
NE_EEP10
CC
125000
Data Flash Endurance per
HSMx sector 5)
NE_HSM CC 125000
Values
Unit Note / Test Condition
Typ.
Max.
-
12000/(fF µs
For Write Burst, Verify
SI [MHz])
Erased and for multi-
(logical) sector erase
commands
0.12 + -
0.08/(fFSI
[MHz])1)
s
cycle count < 1000
0.57 + 0.928 + s
0.15/(fFSI 0.15/(fFSI
[MHz])1) [MHz])
cycle count < 125000
0.12 + -
0.01 * (S
[KByte]) /
(fFSI
[MHz])1)
s
For consecutive logical
sector range of size S,
cycle count < 1000
0.57 + 0.928 + s
0.019 * (S 0.019 * (S
[KByte]) / [KByte]) /
(fFSI
(fFSI
[MHz])1) [MHz])
For consecutive logical
sector range of size S,
cycle count < 125000
-
50
cycles
-
50 +
µs
8 Byte
2500/(fFSI
[MHz]) 3)
-
17
s
Derived value for
documentation
purpose (excl. UCBs
and HSMs), valid for
fFSI = 100MHz
-
96 +
µs
32 Bytes
4400/(fFSI
[MHz]) 3)
-
12000/(fF µs
SI [MHz])
-
10
µs
-
-
years Max. 1000
erase/program cycles
-
-
cycles Max. data retention
time 10 years
-
-
cycles Max. data retention
time 10 years
Data Sheet
3-446
V 1.1 2015-05
TC290/TC297/TC298/TC299 BB-Step Data Sheet downloaded by saravanakumar maniyam (larsen and Toubro limited) at 08 Sep 2015 08:06
 ▷