TC290 Datasheet, PDF (348/476 Pages) Infineon Technologies AG – 32-Bit Single-Chip Micocontroller

TC290 / TC297 / TC298 / TC299 BB-Step
Electrical SpecificationHigh performance LVDS Pads (LVDSH)
3.6
High performance LVDS Pads (LVDSH)
This LVDS pad type is used for the high speed chip to chip communication inferface of the new TC290 / TC297 /
TC298 / TC299. It compose out of a LVDSH pad and a Class F pad.
This pad combination is always supplied by the 3.3V supply rail.
Table 3-23 Class F
Parameter
Input frequency
Input Hysteresis for F pad ¹⁾
Input Leakage Current for F
pad
Symbol
f_IN SR
HYSF CC
I_OZF CC
Min.
-
0.1 *
V_DDP3
-1000
Values
Typ.
-
-
Max.
75
-
-
-
-
-
1000
-1500 -
1500
-300
-
300
-
-
2000
-2000 -
-
-3000 -
3000
-600
-
Pull-up current for F pad
I_PUHF CC |25|
-
-
-
Pull-down current for class F I_PDLF CC -
-
pads
|25|
-
On resistance for F pad, weak R_DSONFW 100
200
driver ²⁾
CC
600
-
|100|
|100|
-
325
Unit Note / Test Condition
MHz
V
TTL
nA
nA
nA
nA
nA
nA
nA
nA
µA
µA
µA
µA
Ohm
(0.1*V_DDP3) < V_IN <
(0.9*V_DDP3); valid for
P21.0, P21.1, P21.2
and P21.3; T_J = 150°C
(0.1*V_DDP3) < V_IN <
(0.9*V_DDP3); valid for
P21.0, P21.1, P21.2
and P21.3; T_J =
150°C
(0.1*V_DDP3) < V_IN <
(0.9*V_DDP3); valid for
P21.0, P21.1, P21.2
and P21.3; T_J =
170°C
(0.1*V_DDP3) < V_IN <
(0.9*V_DDP3); valid for
P21.4 and P21.5
else; valid for P21.0,
P21.1, P21.2 and
P21.3; T_J = 150°C
else; valid for P21.0,
P21.1, P21.2 and
P21.3; T_J = 150°C
else; valid for P21.0,
P21.1, P21.2 and
P21.3; T_J = 170°C
else; valid for P21.4
and P21.5
V_IHmin
V_ILmax
V_IHmin
V_ILmax
PMOS/NMOS ;
I_OH=0.5mA ;
I_OL=0.5mA
Data Sheet
3-342
V 1.1 2015-05
TC290/TC297/TC298/TC299 BB-Step Data Sheet downloaded by saravanakumar maniyam (larsen and Toubro limited) at 08 Sep 2015 08:06