COP8AME9_14 Datasheet, PDF (7/102 Pages) Texas Instruments – COP8AME9 8-Bit CMOS Flash Microcontroller with 8k Memory, Dual Op Amps, Virtual EEPROM, Temperature Sensor, 10-Bit A/D and Brownout Reset

COP8AME9, COP8ANE9
www.ti.com
SNOS930F – MARCH 2001 – REVISED MARCH 2013
Electrical Characteristics DC Electrical Characteristics (−40°C ≤ T_A ≤ +85°C) (continued)
Datasheet min/max specification limits are ensured by design, test, or statistical analysis.
Parameter
Conditions
Min
Typ
Max
Brownout Trip Level
4.17
4.28
4.5
Input Levels (V_IH, V_IL)
Logic High
Logic Low
Internal Bias Resistor for the CKI Crystal/Resonator
Oscillator
0.8 V_CC
0.3
0.16 V_CC
1.0
2.5
Hi-Z Input Leakage
Input Pullup Current
Port Input Hysteresis
Output Current Levels
V_CC = 5.5V
V_CC = 5.5V, V_IN = 0V
−0.5
−50
0.25 V_CC
+0.5
−210
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) ⁽⁴⁾
Allowable Sink Current per Pin
V_CC = 4.5V, V_OH = 3.8V
−10
V_CC = 4.5V, V_OH = 3.8V
−7
V_CC = 4.5V, V_OL = 1.0V
10
15
TRI-STATE Leakage
Maximum Input Current without Latchup ⁽⁵⁾
V_CC = 5.5V
−0.5
+0.5
±200
RAM Retention Voltage, V_R (in HALT Mode)
Input Capacitance
Voltage on G6 to force execution from Boot ROM ⁽⁶⁾
G6 rise time must be slower
than 100 ns
2.0
2 x V_CC
7
V_CC + 7
G6 Rise Time to force execution from Boot ROM
100
Input Current on G6 when Input > V_CC
Flash Endurance
V_IN = 11V, V_CC = 5.5V
500
100k
Flash Data Retention
25°C
100
Units
V
V
V
MΩ
μA
μA
V
μA
mA
mA
mA
μA
mA
V
pF
V
nS
μA
cycles
years
(4) Absolute Maximum Ratings should not be exceeded.
(5) Pins G6 and RESET are designed with a high voltage input network. These pins allow input voltages > V_CC and the pins will have sink
current to V_CC when biased at voltages > V_CC(the pins do not have source current when biased at a voltage below V_CC). These two pins
will not latch up. The voltage at these pins must be limited to < (V_CC+ 7V). WARNING: Voltages in excess of (V_CC + 7V) will cause
damage to these pins. This warning excludes ESD transients.
(6) Vcc must be valid and stable before G6 is raised to a high voltage.
Copyright © 2001–2013, Texas Instruments Incorporated
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