K4N56163QF Datasheet, PDF (73/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
bration procedure is used, it is possible to cause the device to operate outside the bounds of the default
device characteristics tables and figures. In such a situation, the timing parameters in the specification cannot be guaran-
teed. It is solely up to the system application to ensure that the device is calibrated between the minimum and maximum
default values at all times. If this can’t be guaranteed by the system calibration procedure, re-calibration policy, and uncer-
tainty with DQ to DQ variation, then it is recommended that only the default values be used. The nominal maximum and
minimum values represent the change in impedance from nominal low and high as a result of voltage and temperature
change from the nominal condition to the maximum and minimum conditions. If calibrated at an extreme condition, the
amount of variation could be as much as from the nominal minimum to the nominal maximum or vice versa. The driver
characteristics evaluation conditions are:
Nominal 25 ^oC (T case), VDDQ = 1.8 V, typical process
Nominal Low and Nominal High 25 ^oC (T case), VDDQ = 1.8 V, any process
Nominal Minimum TBD ^oC (T case), VDDQ = 1.7 V, any process
Nominal Maximum 0 ^oC (T case), VDDQ = 1.9 V, any process
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Rev 1.6 (Apr. 2005)