K4N56163QF Datasheet, PDF (32/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
ODT timing for active/standby mode
256M gDDR2 SDRAM
T0
T1
T2
T3
T4
T5
CK
CK
CKE
ODT
Internal
Term Res.
tIS
VIH(AC)
tIS
tAOND
VIL(AC)
tAON,min
tAOFD
RTT
tAOF,min
tAON,max
T6
tAOF,max
ODT timing for powerdown mode
T0
T1
CK
CK
CKE
ODT
tIS
VIH(AC)
Internal
Term Res.
tAONPD,min
tAONPD,max
T2
T3
tIS
VIL(AC)
tAOFPD,min
T4
T5
T6
tAOFPD,max
RTT
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Rev 1.6 (Apr. 2005)