K4N56163QF Datasheet, PDF (69/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Input Signal Overshoot/Undershoot Specification
AC Overshoot/Undershoot Specification for Address and Control Pins A0-A15, BA0-BA2, CS, RAS, CAS, WE,
CKE, ODT
Parameter
Specification
- 37
- 30
Maximum peak amplitude allowed for overshoot area (See following figyre):
0.9V
0.9V
Maximum peak amplitude allowed for undershoot area (See following figure):
0.9V
0.9V
Maximum overshoot area above VDD (See following figure).
0.56 V-ns
0.45 V-ns
Maximum undershoot area below VSS (See following figure).
0.56 V-ns
0.45 V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDD
(V)
VSS
Maximum Amplitude
Undershoot Area
Time (ns)
AC Overshoot and Undershoot Definition for Address and Control Pins
AC Overshoot/Undershoot Specification for Clock, Data, Strobe, and Mask Pins DQ, DQS, DM, CK, CK
Parameter
Specification
- 37
-30
Maximum peak amplitude allowed for overshoot area (See following figure):
0.9V
0.9V
Maximum peak amplitude allowed for undershoot area (See following figure):
0.9V
0.9V
Maximum overshoot area above VDDQ (See following figure):
0.28 V-ns
0.23 V-ns
Maximum undershoot area below VSSQ (See following figure):
0.28 V-ns
0.23 V-ns
Maximum Amplitude
Overshoot Area
Volts ^VDDQ
(V)
VSSQ
Maximum Amplitude
Undershoot Area
Time (ns)
AC Overshoot and Undershoot Definition for Clock, Data, Strobe, and Mask Pins
- 69 -
Rev 1.6 (Apr. 2005)