K4N56163QF Datasheet, PDF (50/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
Example 3: Burst Read Operation Followed by Precharge:
RL = 5, AL = 2, CL = 3, BL = 4, t_RTP <= 2 clocks
T0
T1
T2
T3
T4
T5
CK/CK
256M gDDR2 SDRAM
T6
T7
T8
CMD ^{Posted CAS}
READ A
DQS
DQ’s
NOP
NOP
AL + BL/2 clks
NOP
Precharge A
AL = 2
RL =5
CL =3
> = t_RAS
> = t_RTP
NOP
NOP
Bank A
Activate
> = t_RP
DOUT A₀ DOUT A₁ DOUT A₂ DOUT A₃
CL =3
NOP
Example 4: Burst Read Operation Followed by Precharge:
RL = 6, AL = 2, CL = 4, BL = 4, t_RTP <= 2 clocks
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
CMD ^{Post CAS}
READ A
DQS
DQ’s
NOP
NOP
AL + BL/2 Clks
NOP
Precharge A
NOP
NOP
Bank A
Activate
NOP
AL = 2
RL = 6
CL =4
> = t_RAS
> = t_RTP
> = t_RP
CL =4
DOUT A₀ DOUT A₁ DOUT A₂ DOUT A₃
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Rev 1.6 (Apr. 2005)