K4N56163QF Datasheet, PDF (33/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
ODT timing mode switch at entering power down mode
256M gDDR2 SDRAM
CK
CK
CKE
T-5 T-4 T-3 T-2 T-1 T0
tANPD
tIS
Entering Slow Exit Active Power Down Mode
or Precharge Power Down Mode.
tIS
ODT
Internal
Term Res.
VIL(AC)
tAOFD
RTT
tIS
ODT
Internal
Term Res.
VIL(AC)
tAOFPDmax
RTT
T1
T2
T3 T4
Active & Standby
mode timings to
be applied.
Power Down
mode timings to
be applied.
ODT
Internal
Term Res.
ODT
Internal
Term Res.
tIS
VIH(AC)
tAOND
tIS
VIH(AC)
tAONPDmax
RTT
RTT
Active & Standby
mode timings to
be applied.
Power Down
mode timings to
be applied.
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Rev 1.6 (Apr. 2005)