K4N56163QF Datasheet, PDF (26/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
EMRS (1) Programming
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0
1 Qoff 0 DQS
OCD Program
Rtt
Additive Latency
Rtt D.I.C DLL
BA1
0
0
1
1
BA0
MRS mode
0
MRS
1
EMRS(1)
0 EMRS(2): Reserved
1 EMRS(3): Reserved
A6 A2 Rtt (NOMINAL)
0 0 ODT Disabled
01
75 ohm
10
150 ohm
11
50 ohm
A0 DLL Enable
0
Enable
1
Disable
A9 A8 A7 OCD Calibration Program
0 0 0 OCD Calibration mode exit; maintain setting
0 0 1 Drive(1)
0 1 0 Drive(0)
1 0 0 _{Adjust mode}^a
1 1 1 _{OCD Calibration default} ^b
a: When Adjust mode is issued, AL from previously set value must be applied.
b: After setting to default, OCD mode needs to be exited by setting A9-A7 to
000. Refer to the following 3.2.2.3 section for detailed information
A5 A4 A3 Additive Latency
000
0
001
1
010
2
011
3
100
4
101
5
110
Reserved
111
Reserved
A12 _{Qoff (Optional)}^a
0
Output buffer enabled
1
Output buffer disabled
a. Outputs disabled - DQs, DQSs, DQSs .
This feature is used in conjunction with dimm
IDD meaurements when IDDQ is not desired to
be included.
A1
Output Driver
Impedance Control
0
Normal
1
Weak
Driver
Size
100%
60%
A10
DQS
0
Enable
1
Disable
A10
(DQS Enable)
0 (Enable)
1 (Disable)
Strobe Function
Matrix
DQS
DQS
DQS
DQS
DQS
Hi-z
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Rev 1.6 (Apr. 2005)