K4N56163QF Datasheet, PDF (55/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Example 3: Burst Read with Auto Precharge Followed by an activation to the Same Bank
(tRC Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, t_RTP <= 2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
A10 = 1
CMD
Post CAS
READ A
DQS
DQ’s
NOP
NOP
> = tRas(min)
NOP
NOP
NOP
Auto Precharge Begins
NOP
NOP
AL = 2
RL = 5
CL =3
> = t_RC
> = t_RP
DOUT A₀ DOUT A₁ DOUT A₂ DOUT A₃
CL =3
Bank A
Activate
Example 4: Burst Read with Auto Precharge Followed by an Activation to the Same Bank
(tRP Limit):
RL = 5 (AL = 2, CL = 3, internal tRCD = 3, BL = 4, t_RTP <= 2 clocks)
T0
T1
T2
T3
T4
T5
T6
T7
T8
CK/CK
A10 = 1
CMD
Post CAS
READ A
NOP
NOP
NOP
NOP
NOP
NOP
Bank A
Activate
NOP
DQS
DQ’s
> = tRas(min)
Auto Precharge Begins
AL = 2
RL = 5
CL =3
> = t_RC
> = t_RP
DOUT A₀ DOUT A₁ DOUT A₂ DOUT A₃
CL =3
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Rev 1.6 (Apr. 2005)