K4N56163QF Datasheet, PDF (34/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
ODT timing mode switch at exiting power down mode
T0
T1
T4
T5
T6
T7
T8
T9
T10 T11
CK
CK
tIS
tAXPD
CKE
VIH(AC)
Exiting from Slow Active Power Down Mode
or Precharge Power Down Mode.
tIS
Active & Standby
mode timings to
be applied.
ODT
Internal
Term Res.
Power Down
mode timings to
be applied.
ODT
Internal
Term Res.
VIL(AC)
tAOFD
RTT
tIS
VIL(AC)
tAOFPDmax
RTT
tIS
Active & Standby
mode timings to
be applied.
ODT
Internal
Term Res.
Power Down
mode timings to
be applied.
ODT
Internal
Term Res.
VIH(AC)
tAOND
tIS
VIH(AC)
tAONPDmax
RTT
RTT
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Rev 1.6 (Apr. 2005)