K4N56163QF Datasheet, PDF (2/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Revision History
Revision 1.6 (April 14, 2005)
• Modified Power-up and Initialization Sequence on page 22.
Revision 1.5 (March 04, 2005)
• Removed K4N56163QF-GC20/22 from the datasheet
Revision 1.4 (February 5, 2005)
• Added Lead-Free part number in the datasheet.
Revision 1.3 (January 5, 2005)
• Typo corrected
Revision 1.2 (December 28, 2004)
• Changed the DC characteristics table
• Added 50 ohm at the EMRS(1) programming table.
Revision 1.1 (December 1, 2004)
• Changed ICC2P and ICC6 to 10mA
Revision 1.0 (October 20, 2004)
• DC spec defined.
• Changed VDD&VDDQ of K4N56163QF-GC20/22 from 1.8V+0.1V to 2.0V+0.1V
Revision 0.0 (April 29, 2004) - Target Spec
• Defined Target Specification
-2-
Rev 1.6 (Apr. 2005)