K4N56163QF Datasheet, PDF (71/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Table 2. Full Strength Default Pullup Driver Characteristics
Pullup Current (mA)
Voltage (V)
Minimum (23.4 Ohms)
Nominal Default
Low (18 ohms)
Nominal Default
High (18 ohms)
Maximum (12.6 Ohms)
0.2
-8.5
0.3
-12.1
0.4
-14.7
0.5
-16.4
0.6
-17.8
0.7
-18.6
0.8
-19.0
0.9
-19.3
1.0
-19.7
1.1
-19.9
1.2
-20.0
1.3
-20.1
1.4
-20.2
1.5
-20.3
1.6
-20.4
1.7
-20.6
1.8
1.9
-11.1
-16.0
-20.3
-24.0
-27.2
-29.8
-31.9
-33.4
-34.6
-35.5
-36.2
-36.8
-37.2
-37.7
-38.0
-38.4
-38.6
-11.8
-17.0
-22.2
-27.5
-32.4
-36.9
-40.8
-44.5
-47.7
-50.4
-52.5
-54.2
-55.9
-57.1
-58.4
-59.6
-60.8
-15.9
-23.8
-31.8
-39.7
-47.7
-55.0
-62.3
-69.4
-75.3
-80.5
-84.6
-87.7
-90.8
-92.9
-94.9
-97.0
-99.1
-101.1
Figure 2. gDDR2 Default Pullup Characteristics for Full Strength Output Driver
0
-20
Minimum
-40
Nominal
Default
-60
Low
-80
-100
Nominal
Default
High
Maximum
-120
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VDDQ to VOUT (V)
- 71 -
Rev 1.6 (Apr. 2005)