K4N56163QF Datasheet, PDF (56/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Burst Write with Auto-Precharge
If A10 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The gDDR2 SDRAM
automatically begins precharge operation after the completion of the burst write plus write recovery time (tWR). The bank
undergoing auto-precharge from the completion of the write burst may be reactivated if the following two conditions are
satisfied.
(1) The data-in to bank activate delay time (WR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto-Precharge (tRC Limit): WL = 2, tWR =2, tRP=3, BL=4
T0
T1
T2
T3
T4
T5
T6
T7
Tm
CK/CK
A10 = 1
CMD ^{Post CAS}
WRA BankA
DQS/DQS
DQs
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Completion of the Burst Write
Auto Precharge Begins
Bank A
Active
WL =RL - 1 = 2
DIN A₀ DIN A₁ DIN A₂ DIN A₃
> = WR
> = t_RC
> = t_RP
Burst Write with Auto-Precharge (tWR + tRP): WL = 4, tWR =2, tRP=3, BL=4
T0
T3
T4
T5
T6
T7
T8
T9
CK/CK
A10 = 1
CMD ^{Post CAS}
WRA Bank A
DQS/DQS
DQs
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Completion of the Burst Write
Auto Precharge Begins
WL =RL - 1 = 4
DIN A₀ DIN A₁ DIN A₂ DIN A₃
> = WR
> = t_RC
T12
Bank A
Active
> = t_RP
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Rev 1.6 (Apr. 2005)