K4N56163QF Datasheet, PDF (14/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Parameter
Symbol
Address and control input hold time
tIH
Address and control input setup time tIS
Read preamble
tRPRE
Read postamble
tRPST
Active to active command period for
1KB page size products
tRRD
Active to active command period for
2KB page size products
tRRD
Four Activate Window for 1KB page
size products
tFAW
Four Activate Window for 2KB page
size products
tFAW
CAS to CAS command delay
tCCD
Write recovery time
tWR
Auto precharge write recovery +
precharge time
tDAL
Internal write to read command delay tWTR
Internal read to precharge command
delay
tRTP
Exit self refresh to a non-read
command
tXSNR
Exit self refresh to a read command tXSRD
Exit precharge power down to any
non-read command
tXP
Exit active power down to read
command
tXARD
Exit active power down to read
command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
tXARDS
t_CKE
ODT turn-on delay
t_AOND
ODT turn-on
t_AON
ODT turn-on(Power-Down mode)
ODT turn-off delay
t_AONPD
t_AOFD
- 25
min
max
475
x
350
x
0.9
1.1
0.4
0.6
7.5
x
- 30
min
max
475
x
350
x
0.9
1.1
0.4
0.6
7.5
x
10
x
10
x
37.5
37.5
50
50
2
2
6
x
5
x
tWR
+tRP
x
tWR
+tRP
x
3
x
3
x
3
3
tRFC + 10
tRFC + 10
200
200
2
x
2
x
2
x
2
x
- 37
min
max
475
x
350
x
0.9
1.1
0.4
0.6
7.5
x
Units
ps
ps
tCK
tCK
ns
Notes
14,16,18
14,16,18
28
28
12
10
x
ns
12
37.5
ns
50
ns
2
tCK
4
x
tCK
tWR
+tRP
x
tCK
23
2
x
tCK
2
tCK
11
tRFC +
10
ns
200
tCK
2
x
tCK
2
x
tCK
9
6-AL
6 - AL
6 - AL
tCK
3
3
tAC
(min)
tAC
(min)
+2
3.5
3
tAC
(max)+0.7
3tCK+
tAC(max)
+1
3.5
3
2
tAC
(min)
tAC
(min)+2
2.5
2
tAC
(max)+0.7
2tCK+
tAC(max)
+1
2.5
3
2
tAC
(min)
tAC
(min)+2
2.5
tCK
2
tCK
tAC
(max)+1
ns
2tCK+tA
C(max)+1
ns
2.5
tCK
9, 10
13, 25
- 14 -
Rev 1.6 (Apr. 2005)