K4N56163QF Datasheet, PDF (12/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
256M gDDR2 SDRAM
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
- 37
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
4.0
x
0.5
- 30
- 25
Min
Max
1.0
2.0
x
0.25
1.0
2.0
x
0.25
2.5
3.5
x
0.5
Units
pF
pF
pF
pF
pF
pF
Electrical Characteristics & AC Timing for - 35/30/37
(0 °C < T_CASE < 95 °C; V_DDQ = 1.8V + 0.1V; V_DD = 1.8V + 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
Refresh to active/Refresh command time tRFC
Average periodic refresh interval
tREFI
0 °C ≤ T_CASE ≤ 85°C
85 °C < T_CASE ≤ 95°C
Speed Bins and CL, tRCD, tRP, tRC and tRAS
SPEED
Bin (CL-tRCD-tRP)
Parameter
CAS LATENCY
tCK
tRCD
tRP
tRC
tRAS
- 25
6-6-6
min
6
2.5
6
6
22
16
- 30
5-5-5
min
5
3.0
5
5
18
13
256Mb
75
7.8
3.9
- 37
4-5-5
min
4
3.75
5
5
16
11
Units
ns
µs
µs
Units
tCK
ns
tCK
tCK
tCK
tCK
- 12 -
Rev 1.6 (Apr. 2005)