K4N56163QF Datasheet, PDF (70/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
Table 1. Full Strength Default Pulldown Driver Characteristics
256M gDDR2 SDRAM
Pulldow n Current (mA)
Voltage (V)
Minimum (23.4 Ohms)
Nominal Default
Low (18 ohms)
Nominal Default
High (18 ohms)
Maximum (12.6 Ohms)
0.2
8.5
0.3
12.1
0.4
14.7
0.5
16.4
0.6
17.8
0.7
18.6
0.8
19.0
0.9
19.3
1.0
19.7
1.1
19.9
1.2
20.0
1.3
20.1
1.4
20.2
1.5
20.3
1.6
20.4
1.7
20.6
1.8
1.9
11.3
11.8
16.5
16.8
21.2
22.1
25.0
27.6
28.3
32.4
30.9
36.9
33.0
40.9
34.5
44.6
35.5
47.7
36.1
50.4
36.6
52.6
36.9
54.2
37.1
55.9
37.4
57.1
37.6
58.4
37.7
59.6
37.9
60.9
Figure 1. gDDR2 Default Pulldown Characteristics for Full Strength Driver
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
120
100
Maximum
80
Nominal
Default
60
High
40
Nominal
Default
Low
20
Minimum
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9
VOUT to VSSQ (V)
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Rev 1.6 (Apr. 2005)