K4N56163QF Datasheet, PDF (63/73 Pages) Samsung semiconductor – 256Mbit gDDR2 SDRAM

K4N56163QF-GC
256M gDDR2 SDRAM
Refresh command to power down entry
T0
T1
T2
T3
T4
T5 T6
T7
T8
T9
T10 T11
CK
CK
CMD
CKE
REF
CKE can go to low one clock after an Auto-refresh command
Active command to power down entry
CMD
CKE
ACT
CKE can go to low one clock after an Active command
Precharge/Precharge all command to power down entry
CMD
CKE
PR or
PRA
CKE can go to low one clock after a Precharge or Precharge all command
MRS/EMRS command to power down entry
CMD
MRS or
EMRS
CKE
tMRD
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Rev 1.6 (Apr. 2005)