PIC16F193X Datasheet, PDF (369/418 Pages) Microchip Technology – 28/40/44-Pin Flash-Based, 8-Bit CMOS Microcontrollers with LCD Driver and nanoWatt Technology

PIC16F193X/LF193X
28.5 Memory Programming Requirements
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C
Param
No.
Sym.
Characteristic
Min.
Typ† Max. Units
Conditions
Program Memory
Programming Specifications
D110 VIHH Voltage on MCLR/VPP/RE3 pin
8.0
—
9.0
V (Note 3, Note 4)
D111
D112
IDDP
Supply Current during
Programming
VDD for Bulk Erase
—
—
10
mA
2.7
—
VDD
V
max.
D113 VPEW VDD for Write or Row Erase
VDD
min.
—
VDD
V
max.
D114 IPPPGM Current on MCLR/VPP during Erase/
—
Write
D115 IDDPGM Current on VDD during Erase/Write
—
—
1.0
mA
5.0
mA
Data EEPROM Memory
D116 ED Byte Endurance
—
100K
— E/W -40°C to +85°C
D117 VDRW VDD for Read/Write
VDD
min.
—
VDD
V
max.
D118 TDEW Erase/Write Cycle Time
—
4.0
5.0 ms
D119 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D120 TREF Number of Total Erase/Write
Cycles before Refresh⁽²⁾
1M
10M
— E/W -40°C to +85°C
Program Flash Memory
D121 EP Cell Endurance
—
10K
— E/W -40°C to +85°C (Note 1)
D122 VPR VDD for Read
VDD
min.
—
VDD
V
max.
D123 TIW Self-timed Write Cycle Time
—
2
2.5 ms
D124 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
†
Note 1:
2:
3:
4:
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Self-write and Block Erase.
Refer to Section 23.5.1 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Required only if single-supply programming is disabled.
The MPLAB ICD 2 does not support variable VPP output. Circuitry to limit the ICD 2 VPP voltage must be
placed between the ICD 2 and target system when programming or debugging with the ICD 2.
© 2008 Microchip Technology Inc.
Preliminary
DS41364A-page 367