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S912XEP100J5MAG Datasheet, PDF (893/1324 Pages) Freescale Semiconductor, Inc – Features of the MC9S12XE-Family are listed here. Please see Table D-2.for memory options and Table D-2. for the peripheral features that are available on the different family members. | |||
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Chapter 25 256 KByte Flash Module (S12XFTM256K2V1)
D-Flash Sector â The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
EEE (Emulated EEPROM) â A method to emulate the small sector size features and endurance
characteristics associated with an EEPROM.
EEE IFR â Nonvolatile information register located in the D-Flash block that contains data required to
partition the D-Flash memory and buffer RAM for EEE. The EEE IFR is visible in the global memory map
by setting the EEEIFRON bit in the MMCCTL1 register.
NVM Command Mode â An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase â An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes eight
ECC bits for single bit fault correction and double bit fault detection within the phrase.
P-Flash Memory â The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector â The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 1024 bytes.
Program IFR â Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once ï¬eld. The Program IFR is visible in the global memory map by
setting the PGMIFRON bit in the MMCCTL1 register.
25.1.2 Features
25.1.2.1 P-Flash Features
⢠256 Kbytes of P-Flash memory composed of two 128 Kbyte Flash blocks. The 128 Kbyte Flash
blocks are each divided into 128 sectors of 1024 bytes.
⢠Single bit fault correction and double bit fault detection within a 64-bit phrase during read
operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and phrase program operation
⢠Ability to program up to one phrase in each P-Flash block simultaneously
⢠Flexible protection scheme to prevent accidental program or erase of P-Flash memory
25.1.2.2 D-Flash Features
⢠Up to 32 Kbytes of D-Flash memory with 256 byte sectors for user access
⢠Dedicated commands to control access to the D-Flash memory over EEE operation
⢠Single bit fault correction and double bit fault detection within a word during read operations
⢠Automated program and erase algorithm with verify and generation of ECC parity bits
⢠Fast sector erase and word program operation
⢠Ability to program up to four words in a burst sequence
MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor
893
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