S912XEP100J5MAG Datasheet, PDF (1126/1324 Pages) Freescale Semiconductor, Inc – Features of the MC9S12XE-Family are listed here. Please see Table D-2.for memory options and Table D-2. for the peripheral features that are available on the different family members.

Chapter 28 768 KByte Flash Module (S12XFTM768K4V2)
Table 28-61. Valid Set Field Margin Level Settings
CCOB
(CCOBIX=001)
Level Description
0x0002
User Margin-0 Level⁽²⁾
0x0003
Field Margin-1 Level¹
0x0004
Field Margin-0 Level²
1. Read margin to the erased state
2. Read margin to the programmed state
Table 28-62. Set Field Margin Level Command Error Handling
Register
Error Bit
Error Condition
Set if CCOBIX[2:0] != 001 at command launch
Set if a Load Data Field command sequence is currently active
FSTAT
ACCERR
Set if command not available in current mode (see Table 28-30)
Set if an invalid global address [22:16] is supplied⁽¹⁾
Set if an invalid margin level setting is supplied
FPVIOL None
MGSTAT1 None
MGSTAT0 None
FERSTAT
EPVIOLIF None
1. As defined by the memory map for FTM1024K5.
CAUTION
Field margin levels must only be used during verify of the initial factory
programming.
NOTE
Field margin levels can be used to check that Flash memory contents have
adequate margin for data retention at the normal level setting. If unexpected
results are encountered when checking Flash memory contents at field
margin levels, the Flash memory contents should be erased and
reprogrammed.
28.4.2.15 Full Partition D-Flash Command
The Full Partition D-Flash command allows the user to allocate sectors within the D-Flash block for
applications and a partition within the buffer RAM for EEPROM access. The D-Flash block consists of
128 sectors with 256 bytes per sector.
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MC9S12XE-Family Reference Manual Rev. 1.25
Freescale Semiconductor