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S912XEP100J5MAG Datasheet, PDF (1227/1324 Pages) Freescale Semiconductor, Inc – Features of the MC9S12XE-Family are listed here. Please see Table D-2.for memory options and Table D-2. for the peripheral features that are available on the different family members. | |||
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Appendix A Electrical Characteristics
t= 350 â
f--N-----V----M---1---B----U-----S--
A.3.1.15 Full Partition D-Flash (FCMD=0x0F)
The maximum time for partitioning the D-ï¬ash (ERPART=16, DFPART=0) is given by :
tpart â 21800 â
f--N-----V----M-1-----O-----P-- + 400000 â
f--N-----V----M---1---B----U-----S-- + tmass
A.3.1.16 Erase Verify D-Flash Section (FCMD=0x10)
Erase Verify D-Flash for a given number of words NW is given by .
tcheck â (840 + NW) â
f--N-----V----M---1---B----U-----S--
A.3.1.17 D-Flash Programming (FCMD=0x11)
D-Flash programming time is dependent on the number of words being programmed and their location
with respect to a row boundary, because programming across a row boundary requires extra steps. The D-
Flash programming time is speciï¬ed for different cases (1,2,3,4 words and 4 words across a row boundary)
at a 50MHz bus frequency. The typical programming time can be calculated using the following equation,
whereby Nw denotes the number of words; BC=0 if no boundary is crossed and BC=1 if a boundary is
crossed.
tdpgm
=
â
â
(
15
+
(
54
â
Nw
)
+
(
16
â
BC
)
)
â
-f-N----V---1M----O----P- â â
+
â
â
(
460
+
(
640
â
NW
)
+
(
500
â
BC
)
)
â
f--N----V---M-1---B---U----S- â â
The maximum programming time can be calculated using the following equation
tdpgm
=
â
â
(
15
+
(
56
â
Nw
)
+
(
16
â
B
C
))
â
-f-N----V---1M----O----P- â â
+
â
â
(
460
+
( 840
â
NW)
+
( 500
â
BC))
â
f--N----V---M-1---B---U----S- â â
A.3.1.18 Erase D-Flash Sector (FCMD=0x12)
Typical D-Flash sector erase times are those expected on a new device, where no margin verify fails occur.
They can be calculated using the following equation.
teradf â 5025 â
f--N-----V----M-1-----O-----P-- + 700 â
f--N-----V----M---1---B----U-----S--
Maximum D-Fash sector erase times can be calculated using the following equation.
teradf â 20100 â
f--N-----V----M-1-----O-----P-- + 3300 â
f--N-----V----M---1---B----U-----S--
The D-Flash sector erase time on a new device is ~5ms and can extend to 20ms as the ï¬ash is cycled.
Freescale Semiconductor
MC9S12XE-Family Reference Manual Rev. 1.25
1227
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