MC908JB16DWE Datasheet, PDF (63/332 Pages) Freescale Semiconductor, Inc – Microcontrollers

FLASH Memory
4.6 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
1. Set both the ERASE bit and the MASS bit in the FLASH control
register.
2. Write any data to any FLASH address within the address range
$FFD0–$FFFF.
3. Wait for a time, t_nvs (5µs).
4. Set the HVEN bit.
5. Wait for a time t_MErase (200ms).
6. Clear the ERASE bit.
7. Wait for a time, t_nvhl (100µs).
8. Clear the HVEN bit.
9. After time, t_rcv (1µs), the memory can be accessed in read mode
again.
NOTE:
Programming and erasing of FLASH locations cannot be performed by
executing code from the FLASH memory; the code must be executed
from RAM. While these operations must be performed in the order as
shown, but other unrelated operations may occur between the steps.
MC68HC908JB16 — Rev. 1.1
Freescale Semiconductor
FLASH Memory
Technical Data
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