English
Language : 

K524G2GACB-A050 Datasheet, PDF (88/94 Pages) Samsung semiconductor – MCP MEMORY
K524G2GACB-A050
MCP MEMORY
28. Write Interrupted by Precharge & DM
Figure 25. Write Interrupted by Precharge & DM (@BL=8)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
BA0,BA1
BAa
BAa
BAb
BAc
A10/AP
ADDR
(A0~An)
Ca
DQS
Hi-Z
Cb
Cc
DQs
Hi-Z
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
Db0 Db1 Dc0 Dc1 Dc2 Dc3 Dc4 Dc5 Dc6 Dc7
DM
COMMAND
WRITE
tWR
tCCD
PRE
CHARGE
WRITE
WRITE
: Don’t care
- 88 -
Revision 1.3
November 2009