K524G2GACB-A050 Datasheet, PDF (26/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
3.4 * Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
CE
tRC
tRP
tREA
tREH
tREA
RE
tRHZ
I/Ox
R/B
Dout
tRR
Dout
MCP MEMORY
tREA
tCHZ
tCOH
tRHZ
tROH
Dout
NOTE :
Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
3.5 Status Read Cycle
CLE
CE
WE
RE
I/Ox
tCLS
tCS
tCLH
tCLR
tCH
tWP
tWHR
tCEA
tCHZ
tCOH
tDS ^tDH
70h
tIR
tREA
tRHZ
tRHOH
Status Output
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Revision 1.3
November 2009