K524G2GACB-A050 Datasheet, PDF (64/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
1. Precharge
The precharge command is used to precharge or close a bank that has been activated. The precharge command is issued when CS, RAS and
WE are low and CAS is high at the rising edge of the clock. The precharge command can be used to precharge each bank respectively or all
banks simultaneously. The bank select addresses(BA0, BA1) are used to define which bank is precharged when the command is initiated.
For write cycle, tWR(min.) must be satisfied until the precharge command can be issued. After tRP from the precharge, an active command to
the same bank can be initiated.
A10/AP
0
0
0
0
1
Table 1. Bank selection for precharge by Bank address bits
BA1
BA0
0
0
0
1
1
0
1
1
X
X
Precharge
Bank A Only
Bank B Only
Bank C Only
Bank D Only
All Banks
2. No Operation(NOP) & Device Deselect
The device should be deselected by deactivating the CS signal. In this mode, Mobile DDR SDRAM should ignore all the control inputs. The
Mobile DDR SDRAM is put in NOP mode when CS is activated and RAS, CAS and WE are deactivated. Both Device Deselect and NOP com-
mand can not affect operation already in progress. So even if the device is deselected or NOP command is issued under operation, the oper-
ation will be completed.
- 64 -
Revision 1.3
November 2009