K524G2GACB-A050 Datasheet, PDF (56/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
9. Input/Output Capacitance(VDD=1.8, VDDQ=1.8V, TC = 25°C, f=100MHz)
Parameter
Input capacitance
(A0 ~ A13, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Symbol
Min
Max
Unit
CIN1
1.5
3.0
pF
CIN2
1.5
3.5
pF
COUT
2.0
4.5
pF
CIN3
2.0
4.5
pF
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Revision 1.3
November 2009