K524G2GACB-A050 Datasheet, PDF (13/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
1.0 Product Introduction
NAND Flash Memory has addresses multiplexed into 8 I/Os(x16 device case : lower 8 I/Os). This scheme dramatically reduces pin counts and
allows system upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written
through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command, etc require just one cycle bus. Some other commands, like page read and block erase
and page program, require two cycles: one cycle for setup and the other cycle for execution. Page Read and Page Program need the same
five address cycles following the required command input. In Block Erase operation, however, only the three row address cycles are used.
Device operations are selected by writing specific commands into the command register. Table 3 defines the specific commands of the
KF94GxxQ2W/KF88GxxQ2W.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page
without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles
are removed, system performance for solid-state disk application is significantly increased.
Table 3. Command Sets
Function
1st Cycle
Read
00h
Read ID
90h
Read for Copy Back
00h
Reset
FFh
Page Program
80h
Copy-Back Program
85h
Block Erase
60h
Random Data Input⁽¹⁾
85h
Random Data Output⁽¹⁾
05h
Read Status
70h
NOTE :
1) Random Data Input/Output can be executed in a page.
2nd Cycle
30h
-
35h
-
10h
10h
D0h
-
E0h
-
Caution :
Any undefined command inputs are prohibited except for above command set of Table 3.
Acceptable Command during Busy
O
O
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Revision 1.3
November 2009