K524G2GACB-A050 Datasheet, PDF (19/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
NAND Flash Technical Notes (Continued)
2.3 Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data. Block
replacement should be done upon erase or program error.
Write
Read
Failure Mode
Erase Failure
Program Failure
Up to 1 Bit-Failure
Detection and Countermeasure sequence
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Verity ECC -> ECC Correction
ECC
: Error Correcting Code --> Hamming code
Example) 1bit correction & 512-byte
Note) A repetitive page read operation on the same block without erase may cause bit errors, which could be accumulated over time and
exceed the coverage of ECC. Software scheme such as caching into RAM is recommended.
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ?
No
or R/B = 1 ?
*
No
Program Error
Yes
I/O 0 = 0 ?
Yes
Program Completed
* : If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
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Revision 1.3
November 2009