K524G2GACB-A050 Datasheet, PDF (14/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
1.1 ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
IOS
Rating
-0.6 to + 2.45
-0.6 to + 2.45
-0.6 to Vcc + 0.3 (< 2.45V)
-30 to +125
-65 to +150
5
Unit
V
°C
°C
mA
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
1.2 RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, TA=-25 to 85°C)
Parameter
Symbol
Min
Supply Voltage
VCC
1.7
Supply Voltage
VSS
0
Typ.
1.8
0
Max
1.95
0
Unit
V
V
1.3 DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Operating
Current
Page Read with Serial
Access
Program
ICC1
ICC2
tRC=42ns
CE=VIL, IOUT=0mA
-
Erase
ICC3
-
Stand-by Current(TTL)
4Gb,CE=VIH, WP=0V/VCC
ISB1
8Gb DDP,CE=VIH, WP=0V/VCC
Stand-by Current(CMOS)
4Gb,CE=VCC-0.2, WP=0V/VCC
ISB2
8Gb DDP, CE=VCC-0.2, WP=0V/VCC
Input Leakage Current
ILI VIN=0 to Vcc(max)
Output Leakage Current
ILO VOUT=0 to Vcc(max)
Input High Voltage
VIH⁽¹⁾
-
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIL⁽¹⁾
-
VOH IOH=-100µA
VOL IOL=100uA
IOL(R/B) VOL=0.1V
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
2) Typical value is measured at Vcc=1.8V, TA=25°C. Not 100% tested.
Min
-
-
-
-
-
-
-
-
-
0.8xVCC
-0.3
Vcc-0.1
-
3
Typ
Max
Unit
15
25
mA
-
1
-
2
10
50
20
100
µA
-
±10
-
±10
-
VCC+0.3
-
0.2xVcc
V
-
-
-
0.1
4
-
mA
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Revision 1.3
November 2009