K524G2GACB-A050 Datasheet, PDF (55/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
8. AC Operating Test Conditions (VDD = 1.7V to 1.95V, TC = -25°C to 85°C)
Parameter
AC input levels (Vih/Vil)
Input timing measurement reference level
Input signal minimum slew rate
Output timing measurement reference level
Output load condition
Value
0.8 x VDDQ / 0.2 x VDDQ
0.5 x VDDQ
1.0
0.5 x VDDQ
See Figure 6
Unit
V
V
V/ns
V
Output
10.6KΩ
1.8V
13.9KΩ
- VOH (DC) = 0.9 x VDDQ, IOH = -0.1mA
- VOL (DC) = 0.1 x VDDQ, IOL = 0.1mA
20pF
Figure 5. DC Output Load Circuit
Output
Z0=50Ω
Vtt=0.5 x VDDQ
50Ω
Test load values need to be proportional to the driver strength
which is set by the controller.
- Test load for Full Driver Strength Buffer (20pF)
- Test load for Half Driver Strength Buffer (10pF)
Figure 6. AC Output Load Circuit ^{1), 2)}
NOTE :
1) The circuit shown above represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise
representation of the typical system environment nor a depiction of the actual load presented by a production tester. System designers will used IBIS or other sim-
ulations tools to correlate the timing reference load to system environment. Manufacturers will correlate to their poduction test conditions (generally a coaxial trans-
mission line terminated at the tester electronics). For the half strength driver with a nominal 10pF load parameters tAC and tQH are expected to be in ther same
range. However, these parameters are not subject to production test but are estimated by design / characterization. Use of IBIS or other simulation tolls for system
design validation is suggested.
2) Based on nominal impedance at 0.5 x VDDQ.
The impedence for Half(1/2) Driver Strength is designed 55ohm. And for other Driver Strength, it is designed proportionally.
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Revision 1.3
November 2009