K524G2GACB-A050 Datasheet, PDF (81/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
21. Power Up Sequence for Mobile DDR SDRAM
Figure 18. Power Up Sequence for Mobile DDR SDRAM
CK
CK
HiGH
CKE
MCP MEMORY
CS
RAS
CAS
WE
ADDR
Key
Key
RAa
BA0
BA1
A10/AP
Key
Key
RAa
DQs
Hi-Z
Hi-Z
Hi-Z
DM
tRP
Precharge
(All Bank)
tRFC
Auto
Refresh
tRFC
Auto
Refresh
NOTE :
1) Apply power and attempt to maintain CKE at a high state and all other inputs may be undefined.
- Apply VDD before or at the same time as VDDQ.
2) Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3) Issue precharge commands for all banks of the devices.
4) Issue 2 or more auto-refresh commands.
5) Issue a mode register set command to initialize the mode register.
6) Issue a extended mode register set command for the desired operating modes after normal MRS.
The Mode Register and Extended Mode Register do not have default values.
If they are not programmed during the initialization sequence, it may lead to unspecified operation.
All banks have to be in idle state prior to adjusting MRS and EMRS set.
Normal
MRS
Row Active
(A-Bank)
Extended
MRS
: Don’t care
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Revision 1.3
November 2009