K524G2GACB-A050 Datasheet, PDF (58/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
12. Command Truth Table
Command
CKEn-1 CKEn CS
Register
Mode Register Set
H
Refresh
Auto Refresh
H
Entry
Self
Refresh
Exit
L
Bank Active & Row Addr.
H
Read &
Auto Precharge Disable
Column Address _{Auto Precharge Enable}
H
Write &
Auto Precharge Disable
Column Address _{Auto Precharge Enable}
H
Burst Stop
H
Bank Selection
Precharge
H
All Banks
Active Power Down
Entry
H
Exit
L
Entry
H
Precharge Power Down
Exit
L
DM
H
No operation (NOP) : Not defined
H
X
L
H
L
L
L
H
H
X
L
X
L
X
L
X
L
X
L
H
L
L
H
X
H
L
L
H
H
L
H
X
L
RAS
L
L
H
X
L
H
H
H
L
X
H
X
X
H
X
H
X
X
H
CAS
L
L
H
X
H
L
L
H
H
X
H
X
X
H
X
H
X
H
WE
BA0,1
A10/AP
A13,A11,
A9~A0
Note
L
OP CODE
1, 2
3
H
X
3
H
3
X
X
3
H
V
Row Address
H
V
L
V
L
L
Column 4
Address
H
(A0~A9)
4
L
Column 4
Address
H
(A0~A9) ^{4, 6}
X
7
V
L
L
X
H
X
5
X
H
X
X
X
H
X
X
H
X
8
X
9
X
H
9
(V=Valid, X=Don’t Care, H=Logic High, L=Logic Low)
NOTE :
1) OP Code : Operand Code. A0 ~ A13 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2) EMRS/ MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3) Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4) BA0 ~ BA1 : Bank select addresses.
5) If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6) During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7) Burst stop command is valid at every burst length.
8) DM sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
9) This combination is not defined for any function, which means "No Operation(NOP)" in Mobile DDR SDRAM.
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Revision 1.3
November 2009