K524G2GACB-A050 Datasheet, PDF (46/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
2. Mode Register Definition
2.1 Mode Register Set(MRS)
The mode register is designed to support the various operating modes of Mobile DDR SDRAM. It includes Cas latency, addressing mode,
burst length, test mode and vendor specific options to make Mobile DDR SDRAM useful for variety of applications. The mode register is writ-
ten by asserting low on CS, RAS, CAS and WE(The Mobile DDR SDRAM should be in active mode with CKE already high prior to writing into
the mode register). The states of address pins A0 ~ A13 and BA0, BA1 in the same cycle as CS, RAS, CAS and WE going low are written in
the mode register. Two clock cycles are required to complete the write operation in the mode register. Even if the power-up sequence is fin-
ished and some read or write operation is executed afterward, the mode register contents can be changed with the same command and two
clock cycles. This command must be issued only when all banks are in the idle state. The mode register is divided into various fields depend-
ing on functionality. The burst length uses A0 ~ A2, addressing mode uses A3, Cas latency(read latency from column address) uses A4 ~ A6,
A7 ~ A13 is used for test mode. BA0 and BA1 must be set to low for proper MRS operation.
BA1 BA0
A13 ~ A10/AP
Figure 2. Mode Register Set
A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ^{Address Bus}
0
0
RFU¹⁾
0
0
0
CAS Latency
BT
Burst Length
Mode Register
A3
Burst Type
0
Sequential
1
Interleave
A6 A5 A4 CAS Latency
0
0
0
Reserved
0
0
1
Reserved
0
1
0
Reserved
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
Reserved
1
1
1
Reserved
NOTE :
1) RFU(Reserved for future use) should stay "0" during MRS cycle
A2
A1
A0
0
0
0
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Burst Type
Reserved
2
4
8
16
Reserved
Reserved
Reserved
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Revision 1.3
November 2009