K524G2GACB-A050 Datasheet, PDF (7/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
6. ORDERING INFORMATION
MCP MEMORY
K5 2 4G 2G A C B - A 0 50
Samsung
MCP Memory(2chips)
Device Type
NAND Flash + Mobile DDR
NAND Flash Density,
Organization
4G : 4Gbit, x16
Mobile DDR Density, Organization
2G : 2Gbit, x32
M-DDR Speed
50 : 400Mbps@CL3
NAND Flash Speed
0 : None
Package
A : FBGA(HF, LF)
Version
B : 3rd Generation
Operating Voltage
A: 1.8V / 1.8V
Flash Block Architecture
C : Uniform Block
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Revision 1.3
November 2009