K524G2GACB-A050 Datasheet, PDF (27/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
3.6 Read Operation
CLE
MCP MEMORY
tCLR
CE
WE
ALE
RE
I/Ox
R/B
tWC
tWB
tAR
tR
tRC
00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
Column Address
Row Address
tRR
30h
Busy
Dout N Dout N+1
tRHZ
Dout M
3.7 Read Operation(Intercepted by CE)
tCLR
CLE
CE
WE
ALE
RE
I/Ox
R/B
tWB
tAR
tR
tCSD
tCHZ
tCOH
tRC
tRR
00h Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3 30h
Column Address
Row Address
Dout N Dout N+1 Dout N+2
Busy
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Revision 1.3
November 2009