K524G2GACB-A050 Datasheet, PDF (17/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
1.10 AC Characteristics for Operation
Parameter
Symbol
Min
Data Transfer from Cell to Register
tR
-
ALE to RE Delay
tAR
10
CLE to RE Delay
tCLR
10
Ready to RE Low
tRR
20
RE Pulse Width
tRP
21
WE High to Busy
tWB
-
WP Low to WE Low (disable mode)
WP High to WE Low (enable mode)
tWW
100
Read Cycle Time
tRC
42
RE Access Time
tREA
-
CE Access Time
tCEA
-
RE High to Output Hi-Z
tRHZ
-
CE High to Output Hi-Z
tCHZ
-
CE High to ALE or CLE Don’t Care
tCSD
0
RE High to Output Hold
tROH
15
CE High to Output Hold
tCOH
15
RE High Hold Time
tREH
10
Output Hi-Z to RE Low
tIR
0
RE High to WE Low
tRHW
100
WE High to RE Low
tWHR
60
Device Resetting Time(Read/Program/Erase)
tRST
-
NOTE :
1) If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5µs.
MCP MEMORY
Max
Unit
40
µs
-
ns
-
ns
-
ns
-
ns
100
ns
-
ns
-
ns
30
ns
35
ns
100
ns
30
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
-
ns
5/10/500⁽¹⁾
µs
- 17 -
Revision 1.3
November 2009