K524G2GACB-A050 Datasheet, PDF (33/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
3.13 Read ID Operation
CLE
CE
MCP MEMORY
WE
tAR
ALE
RE
I/Ox
90h
Read ID Command
tREA
00h
Address 1cycle
ECh
Device
Code
Maker Code Device Code
3rd cyc.
4th cyc.
5th cyc.
Device
4Gb(x8)
8Gb DDP(x8)
4Gb(x16)
8Gb DDP(x16)
Device Code (2nd Cycle)
ACh
A3h
BCh
B3h
3rd Cycle
00h
01h
00h
01h
4th Cycle
15h
15h
55h
55h
5th Cycle
56h
5Ah
56h
5Ah
3.13.1 ID Definition Table
90 ID : Access command = 90H
Description
1^st Byte
2^nd Byte
3^rd Byte
4^th Byte
5^th Byte
Maker Code
Device Code
Internal Chip Number
Page Size, Block Size,Redundant Area Size, Organization
Plane Number, Plane Size, ECC Level
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Revision 1.3
November 2009