K524G2GACB-A050 Datasheet, PDF (86/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
26. Write with Auto Precharge
Figure 23. Write with Auto Precharge (@BL=8)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
CK
CK
CKE
HIGH
CS
RAS
CAS
WE
BA0,BA1
BAa
BAa
A10/AP
ADDR
Ca
(A0~An)
DQS
Ra
Ra
Auto precharge start
tWR
tRP
NOTE¹⁾
Hi-Z
DQs
Da0 Da1 Da2 Da3 Da4 Da5 Da6 Da7
Hi-Z
DM
COMMAND
WRITE
ACTIVE
NOTE :
1) The row active command of the precharge bank can be issued after tRP from this point
: Don’t care
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Revision 1.3
November 2009