K524G2GACB-A050 Datasheet, PDF (75/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
16. Read With Auto Precharge
If A10/AP is high when read command is issued , the read with auto-precharge function is performed. If a read with auto-precharge command
is issued, the Mobile DDR SDRAM automatically enters the precharge operation BL/2 clock later from a read with auto-precharge command
when tRAS(min) is satisfied. If not, the start point of precharge operation will be delayed until tRAS(min) is satisfied. Once the precharge
operation has started, the bank cannot be reactivated and the new command can not be asserted until the precharge time(tRP) has been sat-
isfied.
0
CK
CK
BANK A
Command _ACTIVE
1
NOP
DQS
Hi-Z
Figure 12. Read with auto precharge timing
2
3
4
5
6
7
8
NOP
NOP
READ A
Auto Precharge
NOP
NOP
NOP
NOP
tRP
9
10
11
NOP NOP
NOP
Bank can be reactivated at
completion of tRP¹⁾
DQs
Hi-Z
tRAS(min)
Dout0 Dout1 Dout2 Dout3
Auto-Precharge starts
NOTE :
1) Burst Length=4, CAS Latency= 3
2) The row active command of the precharge bank can be issued after tRP from this point.
Asserted
command
READ
READ+AP
Active
For same Bank
5
6
READ +No AP^{1) READ+No AP}
READ + AP
READ + AP
Illegal
Illegal
Precharge
Legal
Legal
NOTE :
1) AP = Auto Precharge
7
Illegal
Illegal
Illegal
Illegal
5
Legal
Legal
Legal
Legal
For Different Bank
6
Legal
Legal
Legal
Legal
7
Legal
Legal
Legal
Legal
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Revision 1.3
November 2009