K524G2GACB-A050 Datasheet, PDF (29/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
3.9 Page Program Operation
CLE
MCP MEMORY
CE
tWC
WE
ALE
tWC
tWC
tADL
tWB tPROG
tWHR
RE
I/Ox
R/B
80h
Co.l Add1 Col. Add2 Row Add1 Row Add2 Row Add3
SerialData
Input Command
Column Address
Row Address
Din
Din
N
M
1 up to m Byte
Serial Input
10h
Program
Command
NOTE :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
70h
I/O0
Read Status
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
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Revision 1.3
November 2009