K524G2GACB-A050 Datasheet, PDF (74/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
15. DM masking
The Mobile DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read cycle. When the data mask
is activated(DM high) during write operation, Mobile DDR SDRAM does not accept the corresponding data.(DM to data-mask latency is zero).
DM must be issued at the rising or falling edge of data strobe.
Figure 11. DM masking timing
0
1
2
3
4
5
6
7
8
CK
CK
Command
DQS
DQs
WRITE
NOP
tDQSS
NOP
NOP
NOP
NOP
tWPRES tWPREH
Din 0 Din 1 Din 2 Din 3 Din 4 Din 5 Din 6 Din7
NOP
NOP
Hi-Z
Hi-Z
NOP
DM
NOTE :
1) Burst Length=8
masked by DM=H
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Revision 1.3
November 2009