K524G2GACB-A050 Datasheet, PDF (49/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
2.3 Internal Temperature Compensated Self Refresh (TCSR)
1. In order to save power consumption, this Mobile DRAM includes the internal temperature sensor and control units to control the self refresh-
cycle automatically according to the real device temperature.
2. TCSR ranges for IDD6 shown in the table are as an example only. Max IDD6 valus for 45°C, 85°C are guaranteed. Typical values for 85 °C,
70 °C, 45 °C and 15 °C are obtained from device characterization.
3. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
Self Refresh Current (IDD6)
Temperature Range
Full Array
Typ.
Max
1/2 Array
Typ.
Max
1/4 Array
Unit
Typ.
Max
85 °C
1100
1800
700
1500
500
1300
70 °C
45 °C
750
500
350
uA
450
900
300
750
250
650
15 °C
300
250
200
2.4 Partial Array Self Refresh (PASR)
1. In order to save power consumption, Mobile DDR SDRAM includes PASR option.
2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Figure 4. EMRS code and TCSR , PASR
BA1=0 BA1=0
BA0=0 BA0=1
BA1=0 BA1=0
BA0=0 BA0=1
BA1=0 BA1=0
BA0=0 BA0=1
BA1=1 BA1=1
BA0=0 BA0=1
- Full Array
BA1=1 BA1=1
BA0=0 BA0=1
- 1/2 Array
BA1=1 BA1=1
BA0=0 BA0=1
- 1/4 Array
Partial Self Refresh Area
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Revision 1.3
November 2009