K524G2GACB-A050 Datasheet, PDF (66/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
6. Burst Read Operation
Burst Read operation in Mobile DDR SDRAM is in the same manner as the Mobile SDR SDRAM such that the Burst read command is issued
by asserting CS and CAS low while holding RAS and WE high at the rising edge of the clock(CK) after tRCD from the bank activation. The
address inputs determine the starting address for the Burst. The Mode Register sets type of burst(Sequential or interleave) and burst length(2,
4, 8, 16). The first output data is available with a CAS Latency from the READ command, and the consecutive data are presented on the fall-
ing and rising edge of Data Strobe(DQS) adopted by Mobile DDR SDRAM until the burst length is completed.
Figure 2. Burst read operation timing
0
1
2
3
4
5
6
7
8
CK
CK
Command READ A
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DQS
Hi-Z
DQs
Hi-Z
tDQSCK
tRPRE
tRPST
Preamble
tAC
Postamble
Dout 0 Dout 1 Dout 2 Dout 3
NOTE :
1) Burst Length=4, CAS Latency= 3
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Revision 1.3
November 2009