K524G2GACB-A050 Datasheet, PDF (16/94 Pages) Samsung semiconductor – MCP MEMORY

K524G2GACB-A050
MCP MEMORY
1.8 Read / Program / Erase Characteristics
Parameter
Program Time
Number of Partial Program Cycles
Block Erase Time
Symbol
Min
Typ
Max
Unit
tPROG
-
250
750
µs
Nop
-
-
4
cycles
tBERS
-
2
10
ms
NOTE :
1) Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 1.8V Vcc and 25°C temperature.
1.9 AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
CLE Hold Time
CE Setup Time
CE Hold Time
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Address to Data Loading Time
Symbol
tCLS⁽¹⁾
tCLH
tCS⁽¹⁾
tCH
tWP
tALS⁽¹⁾
tALH
tDS⁽¹⁾
tDH
tWC
tWH
tADL⁽²⁾
Min
21
5
21
5
21
21
5
20
5
40
10
100
NOTE :
1) The transition of the corresponding control pins must occur only once while WE is held low
2) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
Max
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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Revision 1.3
November 2009