K5L5628JTM Datasheet, PDF (79/98 Pages) Samsung semiconductor – 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JT(B)M
PPrreelliimmiinnaarryy
MCP MEMORY
ASYNCHRONOUS READ TIMING WAVEFORM
Fig.16 TIMING WAVEFORM OF PAGE READ CYCLE(MRS=VIH, WE=VIH, WAIT=High-Z)
A22~A2
A1~A0
CS
UB, LB
OE
Data out
tAA
Valid
Address
tCO
tRC
Valid
Address
tOH
Valid
Address
tPC
Valid
Address
Valid
Address
tBA
tOE
tLZ
High Z
tOLZ
tBLZ
tBHZ
tPA
Data
Valid
Data
Valid
Data
Valid
Data
Valid
tCHZ
tOHZ
(ASYNCHRONOUS 4 PAGE READ CYCLE)
1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tCHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
3. In asynchronous 4 page read cycle, Clock, ADV and WAIT signals are ignored.
Table 20. ASYNCHRONOUS PAGE READ AC CHARACTERISTICS
Symbol
Speed
Units
Symbol
Min
Max
Min
tRC
70
-
ns
tOH
3
tAA
-
70
ns
tOLZ
5
tPC
25
-
ns
tBLZ
5
tPA
-
20
ns
tLZ
10
tCO
-
70
ns
tCHZ
0
tBA
-
35
ns
tBHZ
0
tOE
-
35
ns
tOHZ
0
Speed
Max
-
-
-
-
12
12
12
Units
ns
ns
ns
ns
ns
ns
ns
79
Revision 1.0
November 2004